Magneto-optic memory element
US4610912A · kind A · utility
29Cited by
16References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 10, 1984 |
| Grant date | Sep 9, 1986 |
| Priority date | — |
| Expiry date | Sep 10, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24975
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magneto-optic memory element includes a transparent substrate, a first transparent nitride film, a GdTbFe recording layer, a second transparent nitride film, and a reflection film formed in this order. The first transparent nitride film has an index of refraction higher than that of the second transparent nitride film. In a preferred form, the first transparent nitride film is a SiN film having the index of refraction of about 2.0, and the second transparent nitride film is an AlN film having the index of refraction of about 1.8 to 1.9.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.