Semiconductor memory device
US4612565A · kind A · utility
14Cited by
9References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 3, 1985 |
| Grant date | Sep 16, 1986 |
| Priority date | — |
| Expiry date | Oct 3, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a dynamic memory having a plurality of memory cells each of which consists of a MIS type field effect transistor and a charge storing capacitor connected thereto; a dynamic memory is disclosed wherein one electrode of the capacitor is made of a semiconductor layer which is formed on a semiconductor body through an insulating film and wherein a word line a part of which serves as a gate electrode of the MIS type field effect transistor is made of a conductor layer of multilayer structure which consists of a layer of semiconductor and a high-fusing metal layer containing the semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.