Lead-alloy-telluride heterojunction semiconductor laser
US4612644A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 12, 1985 |
| Grant date | Sep 16, 1986 |
| Priority date | — |
| Expiry date | Jul 12, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/22
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A double heterojunction lead salt infrared diode laser having an active region layer of a lead salt semiconductor of a given lattice constant, energy band gap, and index of refraction. The active region layer is sandwiched between two lead salt semiconductor layers containing calcium and one element selected from the group consisting of europium and strontium that are mutually of opposite conductivity type and have substantially the same lattice constant as the active region layer. In addition, the two outside layers have an energy band gap greater than the active region layer and an index of refraction less than the active region layer. The resulting laser has lattice matching, as well as enhanced carrier confinement and optical confinement.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.