Method of forming passivated polycrystalline semiconductors
US4613382A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 14, 1985 |
| Grant date | Sep 23, 1986 |
| Priority date | — |
| Expiry date | Mar 14, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/958
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a polycrystalline semiconductor film body having at least one element selected from a group consisting of hydrogen, fluorine, chlorine, bromine, iodine, lithium, sodium, potassium, rubidium, and cesium included mainly around grain boundaries of the polycrystalline semiconductor film. The simultaneous inclusion of one of the halogen elements and one of the monovalent metal elements of the group described above is more effective to quench charges of the elements included. The content of the elements included is up to 40% by atomic ratio. As a result, the electronic characteristic of the polycrystalline semiconductor film are substantially improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.