Formation of etch-resistant resists through preferential permeation
US4613398A · kind A · utility
126Cited by
6References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 6, 1985 |
| Grant date | Sep 23, 1986 |
| Priority date | — |
| Expiry date | Jun 6, 2005 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/265
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method is provided for creation of oxygen etch-resistant polymeric films for use in the production of micron and submicron dimension patterns and fine lines. These etch-resistant polymeric films find use in fabrication of complex structures such as those in electronic devices and magnetic thin film heads. The etch resistance is achieved by incorporation of a protective-oxide-forming metal into a polymeric material using preferential permeation of organometallic materials into the polymeric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.