Method for doping tin oxide
US4613539A · kind A · utility
8Cited by
7References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 29, 1985 |
| Grant date | Sep 23, 1986 |
| Priority date | — |
| Expiry date | Aug 29, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24926
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention is directed primarily to a method of doping tin oxide with Ta.sub.2 O.sub.5 and/or Nb.sub.2 O.sub.5 using pyrochlore-related compounds derived from the system SnO--SnO.sub.2 --Ta.sub.2 O.sub.5 --Nb.sub.2 O.sub.5 for use in thick film resistor compositions. The invention is also directed to thick film resistors containing the above-described pyrochlore-related compounds and to various compositions and methods for making such thick film resistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.