Electrochemical gas sensor
US4615772A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 12, 1985 |
| Grant date | Oct 7, 1986 |
| Priority date | — |
| Expiry date | Jun 12, 2005 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/305
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A planar photoelectrochemical sensing structure includes a thin, porous layer of photoactive semiconductor powder material deposited on an electronically conducting catalyst film which has been fabricated in two regions separated by a narrow stripe. Using incident light absorbed by the semiconductor, the structure is suited to photosensitizing redox reactions of chemical species introduced to the structure in an aqueous gas-phase environment. If photocarriers generated by the incident light are prevented from reaching one of the catalyst regions, for example by use of a light shield, then an EMF develops between the two catalyst regions. The magnitude of the EMF varies with the concentration of one of the gaseous reactants and thus provides a measure of the concentration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.