Maskless growth of patterned films
US4615904A · kind A · utility
41Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 1, 1985 |
| Grant date | Oct 7, 1986 |
| Priority date | — |
| Expiry date | Apr 1, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/268
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of growing patterned films on a substrate in a deposition chamber without masking, the method consisting of the following steps: pressurizing the chamber with a fluid medium to form a thin absorption layer on the substrate; evacuating the chamber to remove excess fluid medium; prenucleating portions of the substrate with a focused energy beam; repressurizing the chamber with a fluid medium; and inducing deposition of material from the fluid medium and thereby growing a patterned film with deposition occuring primarily on the prenucleated portions of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.