Method of depositing semiconductor films by free radical generation
US4615905A · kind A · utility
81Cited by
3References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 22, 1985 |
| Grant date | Oct 7, 1986 |
| Priority date | — |
| Expiry date | Apr 22, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of depositing a semiconductor alloy film onto a substrate by activating groups of free radicals and incorporating desired ones of the activated groups into the film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.