Direct-write silicon nitride EEPROM cell
US4616245A · kind A · utility
24Cited by
6References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 29, 1984 |
| Grant date | Oct 7, 1986 |
| Priority date | — |
| Expiry date | Oct 29, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B69/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An EEPROM cell which is programmed to a 1 or .0. binary state regardless of the prior state of the cell, that is, without erasing. The cell construction includes silicon nitride capacitors between the floating gate and the programming electrodes which enhances the programming characteristics and the endurance and permits the use of a relatively simple double layer polysilicon process and semiconductor structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.