Enhancement of photoconductivity in pyrolytically prepared semiconductors
US4616246A · kind A · utility
4Cited by
2References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 22, 1982 |
| Grant date | Oct 7, 1986 |
| Priority date | — |
| Expiry date | Nov 22, 2002 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A semiconductor device with an intrinsic layer that exhibits enhanced photoconductivity by the addition of a non-incidental amount of an n-type dopant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.