Non-volatile semiconductor memory

US4616340A · kind A · utility

Assignees

• The Agency of Industrial Science and Technology · JP
• Kabushiki Kaisha Daini Seikosha

Inventors

• Yutaka Hayashi · Hadano, JP
• Yoshikazu Kojima · Chiba, JP
• Masaaki Kamiya · Tokyo, JP
• Kojiro Tanaka · Tokyo, JP

Key dates

• Filing date: Sep 30, 1982
• Grant date: Oct 7, 1986
• Expiry date: Sep 30, 2002

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/683

Abstract

In the non-volatile semiconductor memory of present invention, a select gate and a floating gate are formed on the surface portion of the substrate between a source region and the drain region also acting as a control gate through a gate oxide film. A part of a channel current is injected into the floating gate at the surface portion under the edge of the floating gate covered by the select gate.