Production of conductive metal silicide films from ultrafine powders
US4617237A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 14, 1984 |
| Grant date | Oct 14, 1986 |
| Priority date | — |
| Expiry date | May 14, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28097
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of producing a thin film comprising a conductive metal silicide and the products produced therefrom are disclosed. The method is much less complex than methods employed in the prior art for producing conductive thin films and the method reduces substrate damage by maintaining processing temperatures at about 1,000.degree. C. or less. The process employs a stable suspension comprising ultrafine powders in a solvent. This suspension is deposited on a surface of a substrate and is subsequently heated to form a thin conductive film. The thin conductive film comprises polycrystalline metal silicide, preferably a refractory metal silicide, and may also contain silicon. Composites comprising the thin conductive films and a substrate are also disclosed. The process and products are particularly suited for use in VLSI and VVLSI production.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.