Doped photoconductive film including selenium and tellurium
US4617248A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | May 20, 1985 |
| Grant date | Oct 14, 1986 |
| Priority date | — |
| Expiry date | May 20, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J29/456
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A structure of a photoconductive film related to a target of an image pickup tube of the photo conductivity type is disclosed. This photoconductive film is formed from mainly Se and Te is added in a central part thereof. Further, As, which is considered to form a deep trap level which captures electrons in Se and GaF.sub.3, etc. which form negative space charges by capturing electrons in Se are added in the region adjacent to the region where Te exists. In addition, a thickness of film in the region where GaF.sub.3, etc. exists is selected to be thinner (not smaller than 20 .ANG. and not larger than 90 .ANG.) than a value which has been adopted so far.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.