Optically stabilized semiconductor microwave diodes
US4617532A · kind A · utility
4Cited by
3References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 30, 1984 |
| Grant date | Oct 14, 1986 |
| Priority date | — |
| Expiry date | Apr 30, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/413
Abstract
A semiconductor device is optically phase-locked by utilizing (1) the Burstein shift in differently doped semiconductor layers and injecting light having an energy level lower than the absorption edge of the heavily doped layer in which optical absorption is not desired and higher than the more lightly doped region where it is desired; and (2) the internal photoemission and injecting light having an energy level lower than the band gap of the semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.