Method of manufacturing semiconductor device having a pressure sensor
US4618397A · kind A · utility
111Cited by
3References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 27, 1985 |
| Grant date | Oct 21, 1986 |
| Priority date | — |
| Expiry date | Nov 27, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49103
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present invention relates to a semiconductor device having a semiconductor pressure sensor, which includes a heavily-doped semiconductor layer having a predetermined impurity concentration gradient and formed at the bottom of a diaphragm (membrane portion). Owing to the presence of this semiconductor layer, a flat diaphragm is formed, and a semiconductor pressure sensor of high precision is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.