Schottky power diode
US4618871A · kind A · utility
9Cited by
9References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 16, 1983 |
| Grant date | Oct 21, 1986 |
| Priority date | — |
| Expiry date | May 16, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/60
Abstract
A Schottky power diode includes a semiconductor substrate, an insulating layer disposed on the substrate, a Schottky contact making contact with the substrate through a window formed in the insulating layer, and a semi-insulating layer disposed on the insulating layer and electrically connected to the Schottky contact for receiving a fixed potential at a lateral distance from the Schottky contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.