Darlington transistor circuit
US4618875A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Aug 8, 1983 |
| Grant date | Oct 21, 1986 |
| Priority date | — |
| Expiry date | Aug 8, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/642
Abstract
A Darlington transistor circuit having a power transistor and a driver transistor is proposed. The two transistors are monolithically integrated in a common substrate (10) by a planar process, the substrate forming the collector zones of the two transistors. On the main surface of the substrate (10) there is a passivation layer (13) covering this main surface with the exception of contact windows. The base-collector junctions of the two transistors are protected by a metal electrode (15), which is located above the passivation layer (13) and extends up to a stop ring (14), which is disposed beneath the passivation layer (13) in the substrate (10). The potential at the cover electrode (15) is adjustable with the aid of a voltage divider (16). (FIG. 3).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.