Semiconductor device having a multilayer wiring structure using a polyimide resin
US4618878A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 15, 1984 |
| Grant date | Oct 21, 1986 |
| Priority date | — |
| Expiry date | Jun 15, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having a multilayer wiring structure which comprises a semiconductor substrate, a first wiring layer deposited on said substrate, and a second wiring layer deposited on said first wiring layer with insulating layers disposed therebetween, wherein the insulating interlayer consists of an inorganic insulating layer and a polyimide-based resin film overlying the inorganic insulating layer. The thickness ratio of the polyimide-based resin film to the inorganic insulating film ranges from 0.1 to 0.5. A method of manufacturing a semiconductor device of a multilayer wiring structure wherein an opening is formed in the insulating interlayer to have a small step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.