Process for producing high-purity metal targets for LSI electrodes
US4619695A · kind A · utility
38Cited by
1References
4Claims
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Key dates
| Filing date | Jul 26, 1984 |
| Grant date | Oct 28, 1986 |
| Priority date | — |
| Expiry date | Jul 26, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12833
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high-purity high-melting metal target or high-purity high-melting metal silicide target for LSI electrodes having an alkali metal content of not more than 100 ppb and a radioactive element content of not more than 10 ppb is provided by a wet purification process followed by a series of dry processings. Preferably the high-melting metal is molybdenum, tungsten, titanium, niobium or tantalum. More preferably, the high-melting metal is molybdenum.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.