Sputtering target material and process for producing the same
US4619697A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 27, 1985 |
| Grant date | Oct 28, 1986 |
| Priority date | — |
| Expiry date | Aug 27, 2005 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/3414
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A novel target material for use in the sputter formation of a metal silicide film in electrode wiring in a semiconductor device, and a process for producing such target material are disclosed. The process for producing the target material is characterized by first impregnating molten silicon into a calcined body containing at least one silicide forming metal component and a silicon component and then forming a sintered body with a reduced oxygen content containing both a metal silicide and silicon. The target material prepared in accordance with the invention is extremely low not only in oxygen content but also in the concentrations of other impurities and has high deflective strength as compared with the conventional sintered target. The film formed by sputtering the target of the invention has appreciably reduced impurity levels and hence, very low electric resistivities. The target of the invention enables sputtering to be performed 5 times as fast as in the case using the conventional sintered target.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.