Method of forming a dielectric layer on a semiconductor device
US4619839A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 12, 1984 |
| Grant date | Oct 28, 1986 |
| Priority date | — |
| Expiry date | Dec 12, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76819
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a substantially planar inorganic dielectric layer over a predetermined pattern of electrical interconnects comprises the steps of reacting phosphoric acid and a trivalent metallic halide compound with an aliphatic solvent to form a coating fluid. The coating fluid is then spun onto the semiconductor device to form a layer over the electrical interconnect. The resultant device is then baked at a first temperature to drive off the solvent and then baked at a second, higher temperature, in order to promote the glass forming reaction. This process is repeated as required to form a coating layer having a thickness which exhibits levelling characteristics of such high quality that fine topography can be carried out on succeeding layers of metal in order to form additional interconnect layers with precision.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.