Electron beam scannable LED display device
US4620132A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 1, 1983 |
| Grant date | Oct 28, 1986 |
| Priority date | — |
| Expiry date | Apr 1, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/06243
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a CRT display device the target comprises a multilayered semiconductor including a p-n junction and at least one current-blocking layer. The e-beam is locally absorbed in the current-blocking layer so as to open a narrow zone which allows charge to flow through the forward biased p-n junction. The injection current produces a local spot of light which radiates from the opposite side of the device and whose position is varied by scanning the e-beam. In one embodiment the current-blocking layer is a semi-insulating semiconductor layer, and in another embodiment the current-blocking layer comprises the base of a normally cut-off transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.