Multiple quantum-well infrared detector

US4620214A · kind A · utility

Assignee

• CALIFORNIA INSTITUTE OF TECHNOLOGY · US

Inventors

• Shlomo Margalit · Pasadena, US
• Liew C. Chiu · Singapore, SG
• John S. Smith · Proctorville, US
• Amnon Yariv · Pasadena, US

Key dates

• Filing date: Dec 2, 1983
• Grant date: Oct 28, 1986
• Expiry date: Dec 2, 2003

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/146
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

Alternating layers of N+ GaAs (80 .ANG.) and N+ Ga.sub.1-x Al.sub.x As (300 .ANG.), all heavily doped with a uniform flux of Sn, and biased by 2V, provide a multiple quantum-well heterojunction structure for infrared detection with cutoff wavelength established by the choice of the value x which defines the depth of the wells. Fine tuning of the cutoff wavelength may be achieved by varying the bias voltage. By biasing the individual quantum-well layers progressively through a voltage divider, an avalanche mechanism may be achieved in the detector for signal amplification. The detectors may be fabricated in large two-dimensional arrays.