Method for producing a semiconductor device with a floating gate
US4620361A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 17, 1985 |
| Grant date | Nov 4, 1986 |
| Priority date | — |
| Expiry date | May 17, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B69/00
Abstract
A method for producing a semiconductor device comprises a step of forming a first gate insulation layer on a portion of a single crystal silicon substrate and forming a floating gate of polycrystalline silicon on the first gate insulation layer, a step of forming an oxide layer on the exposed portion of the substrate and on the floating gate, and a step of forming a control gate on the floating gate through the oxide layer. In the formation of the oxide layer, a nitride pattern layer is formed on the floating gate, the entire structure is oxidized by using the nitride pattern layer as a mask, thus forming a protective layer on the exposed portion of the substrate, the nitride pattern layer is removed, and the entire structure is again oxidized, thus forming a second gate insulation layer on the floating gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.