Patent · US Expired

Method of making a thin-film strain gauge

US4620365A · kind A · utility

17Cited by
4References
8Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 8, 1985
Grant dateNov 4, 1986
Priority date
Expiry dateFeb 8, 2005

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T29/49103
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A thin-film strain gauge and a method for producing it are proposed; the strain gauge is advantageously capable of integration into a thin-film circuit. The strain gauge comprises an elastically deformable spring element in combination with at least one elongation-sensitive resistor. The resistor disposition (R1-R4), the low-impedance connections (L11-L42) between the various resistance regions and the associated connection tracks (L5-L8) are applied in a vacuum process, preferably by cathode sputtering. The low-impedance connections (L11-L42) and the connection tracks (L5-L8) are of material which, although different from the material making up the actual resistance region, still has approximately the same temperature coefficient of resistance, so as to preclude errors caused by temperature.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.