Conditioned semiconductor substrates
US4622082A · kind A · utility
25Cited by
2References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 25, 1984 |
| Grant date | Nov 11, 1986 |
| Priority date | — |
| Expiry date | Jun 25, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/06
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
N+ type semiconductor substrates containing oxygen are thermally treated to enhance internal gettering capabilities by heating at 1050.degree. to 1200.degree. C., then at 500.degree. to 900.degree. C. and finally at 950.degree. to 1250.degree. C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.