Molecular beam epitaxial process
US4622083A · kind A · utility
13Cited by
8References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 11, 1985 |
| Grant date | Nov 11, 1986 |
| Priority date | — |
| Expiry date | Mar 11, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/169
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A molecular beam epitaxial growth process, for growth of III-V compounds, wherein a substrate is heated approximately to growth temperature before the group III cell is fully heated. That is, for example, to grow gallium arsenide, the arsenic cell would be heated, the arsenic cell's shutter opened, and the substrate heated up to growth temperature (e.g. 600 C), before the gallium cell is heated up. After the gallium cell is heated up, its shutter is opened, and epitaxial growth proceeds.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.