Laser stimulated halogen gas etching of metal substrates
US4622095A · kind A · utility
42Cited by
8References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 18, 1985 |
| Grant date | Nov 11, 1986 |
| Priority date | — |
| Expiry date | Oct 18, 2005 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23F4/02
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of radiation induced dry etching of a metallized (e.g. copper) substrate is disclosed wherein the substrate is pattern-wise exposed to a beam of laser radiation in a halogen gas atmosphere which is reactive with the substrate to form a metal halide salt reaction product to accelerate the formation of the metal halide salt without its substantial removal from the substrate. The metal halide salt is removed from the substrate by contact of the substrate with a solvent for the metal halide salt.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.