Deep ultra-violet lithographic resist composition and process of using
US4622283A · kind A · utility
15Cited by
5References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 12, 1985 |
| Grant date | Nov 11, 1986 |
| Priority date | — |
| Expiry date | Sep 12, 2005 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0163
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Positive deep ultra-violet photoresists which are base developable comprise base soluble polymers and as photosensitive solubilizing agents compounds of the formula ##STR1## wherein R.sup.1 and R.sup.2 can each individually be alkyl, aryl, alkoxy alkyl, aralkyl or haloalkyl radicals or R.sup.1 and R.sup.2 taken together can be an alkylene radical.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.