Sensor with polycrystalline silicon resistors
US4622856A · kind A · utility
50Cited by
2References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 25, 1984 |
| Grant date | Nov 18, 1986 |
| Priority date | — |
| Expiry date | May 25, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49103
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Sensor with polycrystalline silicon resistors which are applied to a substrate and are covered with a dielectric passivating layer, characterized by the feature that the resistors are thermally adapted by targeted adjustment of their dopings and by suitable healing, and are balanced by laser trimming.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.