Patent · US Expired

Sensor with polycrystalline silicon resistors

US4622856A · kind A · utility

50Cited by
2References
23Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 25, 1984
Grant dateNov 18, 1986
Priority date
Expiry dateMay 25, 2004

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T29/49103
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

Sensor with polycrystalline silicon resistors which are applied to a substrate and are covered with a dielectric passivating layer, characterized by the feature that the resistors are thermally adapted by targeted adjustment of their dopings and by suitable healing, and are balanced by laser trimming.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.