Photoconductive device containing zinc oxide transparent conductive layer

US4623601A · kind A · utility

Assignee

• Atlantic Richfield Company · US

Inventors

• Steven C. Lewis · Alhambra, US
• Robert B. Love · Calabasas, US
• Stephen C. Miller · Austin, US
• Yuh-Han Shing · Hsinchu, TW
• John W. Sibert · Malibu, US
• David Tanner · San Jose, US
• Nang T. Tran · Cottage Grove, US

Key dates

• Filing date: Jun 4, 1985
• Grant date: Nov 18, 1986
• Expiry date: Jun 4, 2005

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

A photoconductive device of decreased resistivity is provided by using at least one zinc oxide transparent conductive layer in conjunction with a thin film amorphous silicon photoconductor. The zinc oxide layer can be used as the front contact, the back contact or both the front and back contacts of the photoconductive device.