Process for passivation of photoconductive detectors made of Hg Cd Te
US4624715A · kind A · utility
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7Claims
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Assignee
Inventor
Key dates
| Filing date | Oct 4, 1984 |
| Grant date | Nov 25, 1986 |
| Priority date | — |
| Expiry date | Oct 4, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/306
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a process for passivation of photoconductive detectors constituted by Hg Cd Te, wherein a layer of native oxide is formed on the faces of an Hg Cd Te wafer and it is made to grow, by pure chemical oxidation in an aqueous solution of K.sub.3 Fe(CN).sub.6 and of KOH. An ordinary layer of ZnS is then formed on the oxide layer. The process makes it possible to produce high-performance infrared detectors, simply.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.