Process for producing thin-film transistor
US4624737A · kind A · utility
108Cited by
2References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 10, 1985 |
| Grant date | Nov 25, 1986 |
| Priority date | — |
| Expiry date | Jun 10, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/481
Abstract
A gate insulating film, a high-resistivity semiconductor film, a low-resistivity semiconductor film and if necessary a conducting film are successively deposited in lamination without exposing them to any oxidizing atmosphere including atmospheric air, and then the source and drain electrodes are selectively formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.