Patent · US Expired

Particulate semiconductors and devices

US4625071A · kind A · utility

24Cited by
6References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 5, 1984
Grant dateNov 25, 1986
Priority date
Expiry dateNov 5, 2004

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02P70/50

Abstract

A semiconductor device in which particles of semiconductive material extend as separate chains from respective first and second contacts. When one of the contacts is of p-type material, the conductive materials that extend from it are of likewise p-material. Similarly, when the contact is of n-type material, the chain that extends from it is also of n-material. In any case the particles can include both p-type and n-type. One of the contacts can have a prescribed work function and the other contact have a lower work function in order to produce a prescribed junction between the two contacts. In addition the contacts may be polymeric. The particulate bodies may range in size from 10 to about 3000 angstroms in diameter. The n-type particles provide a continuous path for electrons and the p-type particles provide a continuous path for holes. The particles are adhered to one another by an inorganic or organic binder, pressure, heat treatment or thermal fusion. Particles for the semiconductive device can be produced by introducing a gaseous phase semiconductane into a reaction chamber, creating particles from the semiconductane and collecting the particles thus created.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.