Apparatus for plasma chemical vapor deposition
US4625678A · kind A · utility
266Cited by
7References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 3, 1985 |
| Grant date | Dec 2, 1986 |
| Priority date | — |
| Expiry date | Jun 3, 2005 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/5096
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma CVD apparatus for forming a deposited film on a base body by introducing a gas of a compound into a chamber and converting the gas into plasma by applying a high frequency electric power, includes a gas feeding pipe leading from the exterior of the chamber into the interior of the chamber, and a heating device. The heating device heats at least a part of the gas feeding pipe inside the chamber, thereby preventing the gas from condensing or solidifying. With this apparatus, plasma CVD can stably be carried out using gases of various compounds which are liquid or solid at room temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.