Light beam applied to a layered semiconductor structure is controlled by another light beam
US4626075A · kind A · utility
43Cited by
3References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 23, 1985 |
| Grant date | Dec 2, 1986 |
| Priority date | — |
| Expiry date | May 23, 2005 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/015
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A nonlinear optical device includes a layered semiconductor structure having layers of different energy band gap materials. Alternate layers of the structure are arranged for containing trapped charge. An input light beam is applied to the layers. A control light beam varies the trapped charge for controlling propagation of the input light beam through the structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.