Target for sputter depositing thin films
US4626336A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 2, 1985 |
| Grant date | Dec 2, 1986 |
| Priority date | — |
| Expiry date | May 2, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3426
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A sputtering target has a sputtering surface with first and second regions of repsective first and second materials. The first region comprises a surface of a first member of the first material, such as of a circular cobalt plate. The second region comprises a surface of a second member of the second material, such as a platinum ring. A cobalt cover ring clamps the platinum ring to the cobalt plate. By varying the relative sizes of the first and second regions, as by changing the size of the cover ring to expose more or less of the platinum ring, the concentration of the two materials in a layer deposited from the target onto substrates is varied. In addition, by imparting planetary motion to substrates during deposition and sizing and positioning the exposed portion of the platinum ring, a radial coercivity gradient is established in the layer deposited on the substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.