Deep ultra-violet lithographic resist composition and process of using
US4626491A · kind A · utility
14Cited by
6References
16Claims
0Family size
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Key dates
| Filing date | Sep 12, 1985 |
| Grant date | Dec 2, 1986 |
| Priority date | — |
| Expiry date | Sep 12, 2005 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/039
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Positive deep ultra-violet photoresists which are base developable comprise base soluble polymers and as photosensitive solubilizing agents oligomeric compounds of the formula ##STR1## wherein X is alkylene, arylene, alkoxyalkylene or aralkylene and n is a positive integer such that the molecular weight of the oligomeric compound is from about 500 to about 3000.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.