Solvent-soluble organopolysilsesquioxane, process for producing the same, and semi-conductor using the same
US4626556A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 25, 1985 |
| Grant date | Dec 2, 1986 |
| Priority date | — |
| Expiry date | Sep 25, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02345
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
A novel raddery organopolysilsesquioxane having lower alkyl groups and alkenyl groups as the side chains and, if necessary, having aryl groups and/or hydrogen atoms bonded as the side chains can be produced by adding water to a solution of a lower-alkyltrihalogenosilane, an alkenyltrihalogenosilane, and, if necessary, an aryltrihalogenosilane and/or a trihalogenosilane in an organic solvent, and heating the resulting mixture. The aforesaid organopolysilsesquioxane can be used for forming a patterned surface-protecting layer or insulating layer for a semiconductor device, in the form of a mixture with a compound which generates crosslinking-reaction-active species upon irradiation with light or an ionizing radiation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.