Double active layer semiconductor laser
US4627065A · kind A · utility
6Cited by
0References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 10, 1983 |
| Grant date | Dec 2, 1986 |
| Priority date | — |
| Expiry date | Jun 10, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/24
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A double active layer semiconductor laser having single longitudinal mode operation is described. The laser comprises first and second active layers which are separated from each other by an intermediate barrier layer but are optically coupled to each other so that, effectively, single mode operation results.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.