Method of forming an isolated semiconductor structure
US4627883A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 1, 1985 |
| Grant date | Dec 9, 1986 |
| Priority date | — |
| Expiry date | Apr 1, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/923
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Method of producing a silicon structure for fabricating integrated circuit devices therein by forming a plurality of regions of N-type single crystal silicon of high resistivity inset in the surface of silicon of either P-type conductivity or of N-type conductivity of low resistivity. The silicon contiguous with the regions of high resistivity N-type silicon is converted to porous silicon by anodically treating in an aqueous solution of HF. Then, conductivity type imparting material is diffused through the porous silicon into portions of the regions of N-type conductivity to alter their electrical characteristics to P-type or to low resistivity N-type. The porous silicon is then oxidized to silicon oxide, electrically isolating each of the N-type regions and its associated portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.