Nonvolatile MNOS memory
US4630086A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Sep 23, 1983 |
| Grant date | Dec 16, 1986 |
| Priority date | — |
| Expiry date | Sep 23, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/683
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory which has both the merits of a floating gate type EEPROM and an MNOS type EEPROM and which can be written into and erased with low voltages is disclosed. Each memory element in the nonvolatile memory has a floating gate, a control gate, a gate insulator film between a semiconductor body and the floating gate, and an inter-layer insulator film between the control gate and the floating gate. The gate insulator film is made up of a very thin SiO.sub.2 film and a thin Si.sub.3 N.sub.4 film formed thereon. The charge centroid of charges injected for storing data lies within the floating gate, not within the Si.sub.3 N.sub.4 film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.