Plasma etching apparatus
US4631105A · kind A · utility
31Cited by
4References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 22, 1985 |
| Grant date | Dec 23, 1986 |
| Priority date | — |
| Expiry date | Apr 22, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32633
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Apparatus for processing semiconductor wafers and the like in an ionized gas plasma. A reaction chamber is divided into two separate regions, and driven and grounded electrodes are positioned outside the reaction chamber adjacent to respective ones of the regions. Wafers or other workpieces to be processed are placed in the region adjacent to the grounded electrode, and the gas to be ionized is introduced into the region adjacent to the driven electrode. The ionization of the gas is confined to the region adjacent to the driven electrode, and the active species pass through the perforated shield to the wafers or other workpieces.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.