Alignment target image enhancement for microlithography process
US4632557A · kind A · utility
11Cited by
10References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 23, 1985 |
| Grant date | Dec 30, 1986 |
| Priority date | — |
| Expiry date | Jan 23, 2005 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F9/7076
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A reflective target region is surrounded by a substantial light scattering region on a substrate to increase the contrast. The width of any reflective portion of the light scattering region is substantially smaller than the width of the target region along the orthogonal axis of the substrate. The light scattering region includes a plurality of peaks and valleys having parallel axis which are oblique to the axis of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.