Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth
US4632712A · kind A · utility
42Cited by
3References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 4, 1984 |
| Grant date | Dec 30, 1986 |
| Priority date | — |
| Expiry date | Dec 4, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/933
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Dislocation densities are reduced in growing semiconductors from the vapor phase by employing a technique of interrupting growth, cooling the layer so far deposited, and then repeating the process until a high quality active top layer is achieved. The method of interrupted growth, coupled with thermal cycling, permits dislocations to be trapped in the initial stages of epitaxial growth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.