Patent · US Expired

Method for interconnecting the active zones and/or the gates of a C/MOS integrated circuit

US4632725A · kind A · utility

8Cited by

5References

16Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Joel Hartmann · Le Pont-de-Claix, FR
Pierre Jeuch · Chauny, FR

Key dates

Filing date	Mar 15, 1985
Grant date	Dec 30, 1986
Priority date	—
Expiry date	Mar 15, 2005

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/76885
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for interconnecting the active zones and/or the gates of a C/MOS integrated circuit characterized in that, after producing the constituent elements of the integrated circuit with the exception of the connections, on the complete circuit is directly deposited a coating of a conductive material, which is then etched in order to form the desired connection.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.