Sulfidization of compound semiconductor surfaces and passivated mercury cadmium telluride substrates
US4632886A · kind A · utility
8Cited by
6References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 28, 1984 |
| Grant date | Dec 30, 1986 |
| Priority date | — |
| Expiry date | Sep 28, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/862
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosure relates to a method of passivating mercury cadmium telluride substrates wherein a substrate surface is lapped and cleaned and then placed in an electrolyte solution containing sulfide ions to electrolytically grow a sulfide passivating layer on the lapped and cleaned surface. A preferred electrolyte solution is formed with sodium sulfide, water and ethylene glycol.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.