Feedback circuit for a semiconductor active element sensor
US4633099A · kind A · utility
15Cited by
14References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 22, 1983 |
| Grant date | Dec 30, 1986 |
| Priority date | — |
| Expiry date | Nov 22, 2003 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L9/06
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The drain voltage of an IGFET having a channel responsive to the change in physical quantity to be measured is negatively fed back to the gate terminal of the IGFET. The negative feedback loop includes series connection of a first amplifier having an amplification factor larger than unity and a second amplifier having an amplification factor smaller than unity. The interconnection point between the first and the second amplifiers is connected to the output terminal. There is provided a stable, highly sensitive and highly reliable semiconductor sensor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.