Unit of light emitting diode arrays
US4633280A · kind A · utility
Assignees
Inventor
Key dates
| Filing date | Jul 10, 1985 |
| Grant date | Dec 30, 1986 |
| Priority date | — |
| Expiry date | Jul 10, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/926
Abstract
A unit of light emitting diode arrays in accordance with the present invention comprises a main body (21) of n-GaAs, layers (22) and (23) of n-GaAsP formed on the main body and a plurality of light emitting regions (24) formed in a line by diffusion of Zn on the surface of the layers. Each of the light emitting regions (24) has a rectangular shape and contains a protruding portion (241). In the direction intersecting at right angles with the light emitting regions (24) formed in a line, electrodes (25) are provided alternately. These electrodes (25) are formed by evaporation and photolithography to cover the respective protruding portions (241) so as to be in ohmic contact. Thus, since the electrodes (25) are formed to cover the protruding portions (241) of the light emitting regions (24), a printing dot of a desired shape can be formed and accordingly, the quality of printing can be improved and an arrangement of a high density of printing dots can be made.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.